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相关产品
产品信息
MOC207
MOC207
MOC207
DESCRIPTION
These devices consist of a gallium arsenide infrared emitting diode optically coupled to a
monolithic silicon phototransistor detector, in a surface mountable, small outline, plastic
package. They are ideally suited for high density applications, and eliminate the need for
through - the - board mounting.
FEATURES
• U.L. Recognized (File #E90700, Volume 2)
• VDE Recognized (File #136616) (add option "V" for VDE approval, i.e, MOC205V-M)
• Closely Matched Current Transfer Ratios
• Convenient Plastic SOIC-8 Surface Mountable Package Style
• Minimum BVCEO of 70 Volts Guaranteed
• Standard SOIC-8 Footprint, with 0.050" Lead Spacing
• Compatible with Dual Wave, Vapor Phase and IR Reflflow Soldering
• High Input-Output Isolation of 2500 VAC(rms) Guaranteed
APPLICATIONS
• Feedback Control Circuits
• Interfacing and coupling systems of different potentials and impedances
• General Purpose Switching Circuits
• Monitor and Detection Circuits
封装 / 箱体: SOIC-Narrow-8
输出类型: NPN Phototransistor
通道数量: 1 Channel
If - 正向电流: 60 mA
集电极/发射极电压: 70 V
集电极电流: 150 mA
绝缘电压: 2500 Vrms
集电极/发射极饱和电压: 0.4 V
Vf - 正向电压: 1.5 V
Vr - 反向电压 : 6 V
Pd-功率耗散: 250 mW
工作温度: - 40 C
工作温度: + 100 C
系列: MOC207M
封装: Tube
配置: 1 Channel
高度: 3.43 mm
长度: 5.13 mm
宽度: 4.16 mm
商标: ON Semiconductor / Fairchild
电流传递比: 200 %
产品类型: Transistor Output Optocouplers
工厂包装数量: 3000
子类别: Optocouplers
零件号别名: MOC207VM_NL
单位重量: 252 mg