深圳市华之电科技有限公司

CT Micro 高速光耦 CT 6N136

CT Micro 高速光耦 CT 6N136

高速光耦一般应用在电源上，具体应用在放点等离子，固态继电器，工业测量机，调制器，电话，空调控制板，可编程逻辑控制器等等。

CT Micro 高速光耦 CT 6N136

CT Micro 高速光耦 CT 6N136

Features

•High speed 1MBit/s

•High isolation voltage between input and output

(Viso=5000 Vrms )

•Guaranteed CTR performance from 0°C to 70°C

•Wide operating temperature range of -55°C to

100°C

•Regulatory Approvals

UL - UL1577 (E364000)

VDE - EN60747-5-5(VDE0884-5)

CQC – GB4943.1, GB8898

IEC60065, IEC60950

Description

The 6N135, 6N136, CT4502 and CT4503 devices

each consist of an infrared emitting diode, optically

coupled to a high speed photo detector transistor. A

separate connection for the photodiode bias and

output-transistor collector increase the speed by

several orders of magnitude over conventional

phototransistor couplers by reducing the

base-collector capacitance of the input transistor.

The devices are packaged in an 8-pin DIP package

and also available in gullwing (400mil) and surface

mount lead forming.

Applications

•Line receivers

•Telecommunication equipment

•High speed logic ground isolation

•Feedback loop in switch-mode power supplies

•Home appliances

CT Micro 高速光耦 CT 6N136