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询价相关产品
产品信息
EL6N136
EL6N136
EL6N136
EL6N136
Features
•High speed 1Mbit/s
• High isolation voltage between input
and output (Viso=5000 Vrms )
•Guaranteed performance from 0°C to 70°C
•Wide operating temperature range of -55°C to 100°C
•Pb free and RoHS compliant
•UL and cUL approved(No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
Description
The 6N135, 6N136, EL4502 and EL4503 devices each consist of an infrared emitting diode, optically coupled to a high
speed photo detector transistor. A separate connection for the photodiode bias and output-transistor collector increase
the speed by several orders of magnitude over conventional phototransistor couplers by reducing the base-collector
capacitance of the input transistor. The devices are packaged in an 8-pin DIP package and available in wide-lead
spacing and SMD option
Applications
• Line receivers
• Telecommunication equipments
•Power transistor isolation in motor drives
•Replacement for low speed phototransistor photo couplers
•Feedback loop in switch-mode power supplies
• Home appliances
• High speed logic ground isolation