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产品信息
EL4N35S(TA)
EL4N35S(TA)
EL4N35S(TA)
EL4N35S(TA)
Features:
• 4N2X series: 4N25, 4N26, 4N27, 4N28
• 4N3X series: 4N35, 4N36, 4N37, 4N38
• H11AX series: H11A1, H11A2, H11A3, H11A4, H11A5
• High isolation voltage between input and output
(Viso=5000 V rms)
• Creepage distance >7.62 mm
• Operating temperature up to +110°C
• Compact dual-in-line package
• Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approval
• DEMKO approval
• FIMKO approval
• CSA approved
• CQC approved
Description
The 4N2X, 4N3X, H11AX series of devices each consist of
an infrared emitting diode optically coupled to a phototransistor.
They are packaged in a 6-pin DIP package and available in
wide-lead spacing and SMD option. Schematic
1. Anode
2. Cathode
3. No Connection
4. Emitter
5. Collector
6. Base
Applications
• Power supply regulators
• Digital logic inputs
• Microprocessor inputs
EL4N35S(TA)
Option Description Packing quantity
None Standard DIP-6 65 units per tube
M Wide lead bend (0.4 inch spacing) 65 units per tube
S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel
S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel
S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel
S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel