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产品信息
EL357N(B)(TA)-G
EL357N(B)(TA)-G
EL357N(B)(TA)-G
Features:
•Halogens free
•Current transfer ratio
(CTR: 50~600% at IF =5mA, VCE =5V)
• High isolation voltage between input
and output (Viso=3750 V rms )
• Compact 4 Pin SOP with a 2.0 mm profile
•Pb free and RoHS compliant.
• UL approved (No. E214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved (No. 1408633)
Description
The EL357N-G series contains an infrared emitting diode,
optically coupled to a phototransistor detector.
The devices in a 4-pin small outline SMD package.
Applications
•DC-DC Converters
• Programmable controllers
• Telecommunication equipments
• Signal transmission between circuits of different potentials and impedances
EL357N(B)(TA)-G
Option Description Packing quantity
None Standard SMD option 100 units per tube
-V Standard SMD option + VDE 100 units per tube
(TA) TA Tape & reel option 3000 units per reel
(TB) TB Tape & reel option 3000 units per reel
(TA)-V TA Tape & reel option + VDE 3000 units per reel
(TB)-V TB Tape & reel option + VDE 3000 units per reel