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询价相关产品
产品信息
CTM453(V)(T1)
CTM453(V)(T1)
CTM453(V)(T1)
CTM453(V)(T1)
Features
High speed 1Mbit/s
High isolation voltage between input and output
(Viso=3750 Vrms )
Guaranteed CTR performance from 0°C to 70°C
Wide operating temperature range of -55°C to
100°C
Green Package
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CTM452 and CTM453 devices each consist of
an infrared emitting diode, optically coupled to a
high speed photo detector transistor. A separate
connection for the photodiode bias and
output-transistor collector increase the speed by
several orders of magnitude over conventional
phototransistor couplers by reducing the
base-collector capacitance of the input transistor.
The devices are packaged in a Mini-Flat package .
Applications
Line receivers
Telecommunication equipment
Feedback loop in switch-mode power supplies
Home appliances
High speed logic ground isolation
CTM453(V)(T1)
Profile Feature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (ts) from (Tsmin to Tsmax) 60-120 seconds
Ramp-up Rate (tL to tP) 3°C/second max.
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60 – 150 seconds
Peak Body Package Temperature 260°C +0°C / -5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max
Time 25°C to Peak Temperature 8 minutes max.