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询价相关产品
产品信息
CT851
CT851
CT851
CT851
Features
•••• High isolation 5000 VRMS
•••• CTR flexibility available see order information
•••• DC input with transistor output
•••• External Creepage ≥ 7.5mm (S/SL Type)
•••• External Creepage ≥ 8.0mm (SLM Type)
•••• Operating temperature range - 55 °C to 100 °C
•••• Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Description
The CT851 series consists of a high power transistor
optically coupled to a gallium arsenide
Infrared-emitting diode in a 4-lead DIP package
different lead forming options.
Applications
•••• Switch mode power supplies
•••• Computer peripheral interface
•••• Microprocessor system interface
Profile Feature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (ts) from (Tsmin to Tsmax) 60-120 seconds
Ramp-up Rate (tL to tP) 3°C/second max.
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60 – 150 seconds
Peak Body Package Temperature 260°C +0°C / -5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max
Time 25°C to Peak Temperature 8 minutes max.