- 非IC关键词
深圳市华之电科技有限公司
- 卖家积分：
营业执照：已审核经营模式：贸易/代理/分销所在地区：广东 深圳保证金额：10000企业网站：
http://hzd-ic.hqew.com/
收藏本公司 人气：560786
企业档案
- 相关证件：
- 会员类型：
- 会员年限：13年
- 陈先生
- 电话：0755-23884658
- 手机：13822060018
- 阿库IM：
- 地址：深圳市福田区振华路飞亚达大厦西座925-926室
- E-mail：3005133872@qq.com
询价相关产品
产品信息
CT4N33(HZD)
CT4N33(HZD)
CT4N33(HZD)
CT4N33(HZD)
Features
High isolation 5000 VRMS
CTR flexibility available see order information
DC input with transistor output
Temperature range - 55 °C to 100 °C
Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Applications
Switch mode power supplies
Computer peripheral interface
Microprocessor system interface
Description
The 4N29, 4N30, 4N31, 4N32, 4N33, H11B1,
H11B2, H11B3, H11B255, and TIL113 series
consists of a photodarlington transistor optically
coupled to a gallium arsenide Infrared-emitting diode
in a 4-lead DIP package with bending option.
CT4N33(HZD)
Profile Feature Pb-Free Assembly Profile
Temperature Min. (Tsmin) 150°C
Temperature Max. (Tsmax) 200°C
Time (ts) from (Tsmin to Tsmax) 60-120 seconds
Ramp-up Rate (tL to tP) 3°C/second max.
Liquidous Temperature (TL) 217°C
Time (tL) Maintained Above (TL) 60 – 150 seconds
Peak Body Package Temperature 260°C +0°C / -5°C
Time (tP) within 5°C of 260°C 30 seconds
Ramp-down Rate (TP to TL) 6°C/second max
Time 25°C to Peak Temperature 8 minutes max.