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询价相关产品
产品信息
CT6N136(S)(T1)
CT6N136(S)(T1)
CT6N136(S)(T1)
CT6N136(S)(T1)
Features
•••• High speed 1MBit/s
•••• High isolation voltage between input and output
(Viso=5000 Vrms )
•••• Guaranteed CTR performance from 0°C to 70°C
•••• Wide operating temperature range of -55°C to
100°C
•••• Regulatory Approvals
UL - UL1577 (E364000)
VDE - EN60747-5-5(VDE0884-5)
CQC – GB4943.1, GB8898
IEC60065, IEC60950
Applications
•••• Line receivers
•••• Telecommunication equipment
•••• High speed logic ground isolation
•••• Feedback loop in switch-mode power supplies
•••• Home appliances
Package Outline Schematic
Note: Different bending options available. See package
dimension.
Description
The 6N135, 6N136, CT4502 and CT4503 devices
each consist of an infrared emitting diode, optically
coupled to a high speed photo detector transistor. A
separate connection for the photodiode bias and
output-transistor collector increase the speed by
several orders of magnitude over conventional
phototransistor couplers by reducing the
base-collector capacitance of the input transistor.
The devices are packaged in an 8-pin DIP package
and also available in gullwing (400mil) and surface
mount lead forming.