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深圳市华之电科技有限公司
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相关产品
产品信息
TLP781(BL F)
TLP781(BL F)
TLP781(BL F)
TLP781(BL F)
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
The TOSHIBA TLP781 consists of a silicone photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
four lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
• TLP781 : 7.62mm pitch type DIP4
• TLP781F : 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002
Approved no.8961
BS EN60950-1:2006
Approved no.8962
• SEMKO approval: EN60950-1,EN60065 under plan
• Option(D4)type
VDE approved : DIN EN60747-5-2
Certificate No. 40021173
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
• Construction mechanical rating
7.62mm Pitch
Standard Type
10.16mm Pitch
TLPxxxF Type
Creepage distance 6.5mm(min) 8.0mm(min)
Clearance 6.5mm(min) 8.0mm(min)
Insulation thickness 0.4mm(min) 0.4mm(min)