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询价相关产品
产品信息
TLP781(GR-TP6 F)
TLP781(GR-TP6 F)
TLP781(GR-TP6 F)
TLP781(GR-TP6 F)
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage
Circuits
The TOSHIBA TLP781 consists of a silicone photo−transistor
optically coupled to a gallium arsenide infrared emitting diode in a
four lead plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
• TLP781 : 7.62mm pitch type DIP4
• TLP781F : 10.16mm pitch type DIP4
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577, file No. E67349
• BSI approved: BS EN60065:2002
Approved no.8961
BS EN60950-1:2006
Approved no.8962
• SEMKO approval: EN60950-1,EN60065 under plan
• Option(D4)type
VDE approved : DIN EN60747-5-2
Certificate No. 40021173
(Note): When an EN60747-5-2 approved type is needed,
Please designate “Option (D4)”
• Construction mechanical rating
7.62mm Pitch
Standard Type
10.16mm Pitch
TLPxxxF Type
Creepage distance 6.5mm(min) 8.0mm(min)
Clearance 6.5mm(min) 8.0mm(min)
Insulation thickness 0.4mm(min) 0.4mm(min)