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询价相关产品
产品信息
EL6N139
EL6N139
EL6N139
EL6N139
Option Description Packing quantity
None Standard DIP-8 45 units per tube
M Wide lead bend (0.4 inch spacing) 45 units per tube
S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel
S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel
S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel
S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel
EL6N139
Features
• High current transfer ratio–2000% typical
• High isolation voltage between input
and output (Viso=5000 Vrms )
• Guaranteed performance from 0°C to 70°C
• Pb free and RoHS compliant.
• UL approved (No. 214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
•CSA approved (No. 2037145)
Description
The 6N138 and 6N139 devices each consists of an infrared emitting diode, optically coupled to a high gain split
Darlington photo detector. They provide extremely high current transfer ratio between input and output, with
access to a base terminal to adjust the gain bandwidth.These devices are packaged in an 8-pin DIP package and
available in wide-lead spacing and SMD options.
Applications
• Digital logic ground isolation
• RS-232C line receiver
• Low input current line receiver
• Microprocessor bus isolation
• Current loop receiver