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产品信息
EL6N137S(TA)
EL6N137S(TA)
EL6N137S(TA)
EL6N137S(TA)
Features:
• High speed 10Mbit/s
•10kV/μs min. common mode transient immunity
(EL2611)
• Guaranteed performance from -40 to 85℃
• Logic gate output
• High isolation voltage between input
and output (Viso=5000 V rms )
• Pb free and RoHS compliant.
• UL approved (No. 214129)
• VDE approved (No. 132249)
• SEMKO approved
• NEMKO approved
• DEMKO approved
• FIMKO approved
• CSA approved (No. 2037145)
Description
The 6N137, EL2601 and EL2611 are consists of an infrared
emitting diode optically coupled to a high speed integrated
photo detector logic gate with a strobable output.
It is packaged in a 8-pin DIP package and available in
wide-lead spacing and SMD options.
Applications
• Ground loop elimination
• LSTTL to TTL, LSTTL or 5 volt CMOS
• Line receiver, data transmission
• Data multiplexing
• Switching power supplies
• Pulse transformer replacement
• Computer peripheral interface
EL6N137S(TA)
Option Description Packing quantity
None Standard DIP-8 45 units per tube
M Wide lead bend (0.4 inch spacing) 45 units per tube
S (TA) Surface mount lead form + TA tape & reel option 1000 units per reel
S (TB) Surface mount lead form + TB tape & reel option 1000 units per reel
S1 (TA) Surface mount lead form (low profile) + TA tape & reel option 1000 units per reel
S1 (TB) Surface mount lead form (low profile) + TB tape & reel option 1000 units per reel